Interface simulation of strained and non-abrupt III–V quantum wells. Part 1: band profile calculation

Published: 1 January 1996| Version 1 | DOI: 10.17632/245xy9s8bz.1
C. Lamberti


Abstract This work presents a program, based on the Van de Walle-Martin model solid theory, able to compute the most important physical quantities of any In_(1-x)Ga_x As_y P_(1-y)quaternary epitaxially strained growth on any In_(1-z)Ga_z As_w P^(1-w), hypothetical substrate. The adopted interface-band alignment procedure is extensively described. The effect of strain on several examples of ideal heterostructures characterized by abrupt interfaces is discussed in detail. Furthermore, the probl... Title of program: BANDSTRAIN Catalogue Id: ADCM_v1_0 Nature of problem Biaxial compression or tension induced by the presence of a mismatch between the lattice parameter of the substrate and the growth epitaxial layers implies a deformation of the bands profiles of electrons, heavy and light holes along the growth axis [2] causing the removal of the degeneration of the heavy and light holes bands. Due to the technological difficulties in executing instantaneous group V switches even non intentionally strained III-V heterostructures present strained layer at the int ... Versions of this program held in the CPC repository in Mendeley Data ADCM_v1_0; BANDSTRAIN; 10.1016/0010-4655(95)00118-2 This program has been imported from the CPC Program Library held at Queen's University Belfast (1969-2019)



Surface Science, Condensed Matter Physics, Computational Physics